Deep levels induced optical memory effect in thin InGaN film

Deep levels induced optical memory effect in thin InGaN film

An optical memory effect is found in a 20 nm InGaN film. With increasing illumination time, photoluminescence (PL) intensity of InGaN rises at first and then falls. We present that this effect is caused by carriers capture in deep levels near interfaces between GaN and InGaN. Firstly, carriers captu...

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Bibliographic Details
Main Authors: B. B. Wang, J. J. Zhu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, W. Liu, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, M. Li
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5045811

Internet

http://dx.doi.org/10.1063/1.5045811

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