UNCERTAINTY ANALYSIS OF SHIP MODEL RESISTANCE TEST IN ACTUAL SEAS

by D.G. Zhao, Y.W. Wang, G.L. Zhou
Published 2020-01-01

Investigation on the leakage current characteristics of large size GaN diodes

by J. Yang, D. G. Zhao, Z. S. Liu, P. Chen, F. Liang
Published 2021-07-01

Deep levels induced optical memory effect in thin InGaN film

by B. B. Wang, J. J. Zhu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, W. Liu, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, M. Li
Published 2018-08-01

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

by F. Liang, Jing Yang, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, Mo Li, Y. T. Zhang, G. T. Du
Published 2018-08-01

Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

by P. Chen, D. G. Zhao, D. S. Jiang, H. Long, M. Li, J. Yang, J. J. Zhu, Z. S. Liu, X. J. Li, W. Liu, X. Li, F. Liang, J. P. Liu, B. S. Zhang, H. Yang
Published 2017-03-01

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

by P. Chen, D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, J. Yang, X. Li, L. C. Le, X. G. He, W. Liu, X. J. Li, F. Liang, B. S. Zhang, H. Yang, Y. T. Zhang, G. T. Du
Published 2016-03-01