Investigation for the structural stress of SiO2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor deposition
For a multilayered configuration of SiO2 film created by plasma enhanced chemical vapor deposition (PECVD), the thermal stress and growth-caused stress are two intrinsic stresses. In this work, based on the interactions of all the layers of film, a nonlinearly distributed structural stress over a la...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-08-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5045516 |