Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)

Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)

Thermal stress induced by annealing the Cu filling of through-silicon vias (TSVs) requires further investigation as it can inhibit the performance of semiconductor devices. This study reports the filling behavior of TSVs prepared using direct current and pulse current Cu electrodeposition with and w...

Full description

Bibliographic Details
Main Authors: Youjung Kim, Sanghyun Jin, Kimoon Park, Jinhyun Lee, Jae-Hong Lim, Bongyoung Yoo
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-10-01
Series:Frontiers in Chemistry
Subjects:
through-silicon-via (TSV)
pulse current
pre-annealing
thermal extrusion
seed layer
Online Access:https://www.frontiersin.org/article/10.3389/fchem.2020.00771/full

Internet

https://www.frontiersin.org/article/10.3389/fchem.2020.00771/full

Similar Items