A Comparative Study Between Spin-Transfer-Torque and Spin-Hall-Effect Switching Mechanisms in PMTJ Using SPICE

A Comparative Study Between Spin-Transfer-Torque and Spin-Hall-Effect Switching Mechanisms in PMTJ Using SPICE

The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions. The spin Hall effect (SHE)-based MRAM is an alternative...

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Bibliographic Details
Main Authors: Ibrahim Ahmed, Zhengyang Zhao, Meghna G. Mankalale, SACHIN S. Sapatnekar, Jian-Ping Wang, Chris H. Kim
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Composite magnetic tunnel junction (MTJ)
initial angle
MTJ model
spin Hall effect magnetoresistive random access memory (SHE-MRAM)
spin transfer torque magnetoresistive random access memory (STT-MRAM)
spintronics
Online Access:https://ieeexplore.ieee.org/document/8067488/

Internet

https://ieeexplore.ieee.org/document/8067488/

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