Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching using O<sub>2</sub> and BCl<sub>3</sub> Plasma

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching using O<sub>2</sub> and BCl<sub>3</sub> Plasma

This paper reports on the use of low-damage atomic layer etching (ALE) performed using O<sub>2</sub> and BCl<sub>3</sub> plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which re...

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Bibliographic Details
Main Authors: Il-Hwan Hwang, Ho-Young Cha, Kwang-Seok Seo
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Coatings
Subjects:
GaN
AlGaN
atomic layer etching
low damage etching
Online Access:https://www.mdpi.com/2079-6412/11/3/268

Internet

https://www.mdpi.com/2079-6412/11/3/268

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