Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
We report on record low free carrier concentration values in metalorganic chemical vapor deposition (MOCVD) grown β-Ga2O3 by using N2O for oxidation. Contrary to the pure oxygen, the N2O oxidant produced β-Ga2O3 thin films co-doped with nitrogen and hydrogen, but the incorporation efficiency of both...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-02-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/1.5132752 |