Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

We report on record low free carrier concentration values in metalorganic chemical vapor deposition (MOCVD) grown β-Ga2O3 by using N2O for oxidation. Contrary to the pure oxygen, the N2O oxidant produced β-Ga2O3 thin films co-doped with nitrogen and hydrogen, but the incorporation efficiency of both...

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Bibliographic Details
Main Authors: Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck
Format: Article
Language:English
Published: AIP Publishing LLC 2020-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5132752