Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy

by Akhil Mauze, Yuewei Zhang, Takeki Itoh, Feng Wu, James S. Speck
Published 2020-02-01

Wide bandgap oxides

by Kevin D. Leedy, Kookrin Char, Masataka Higashiwaki, Rebecca L. Peterson, James S. Speck
Published 2019-02-01

H2O vapor assisted growth of β-Ga2O3 by MOCVD

by Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky
Published 2020-08-01

Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3

by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nicholas Valente, Akhil Mauze, Takeki Itoh, James S. Speck
Published 2019-12-01

Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck
Published 2020-02-01

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

by Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky, James S. Speck
Published 2019-02-01

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

by Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel
Published 2019-12-01

Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

by Martin Feneberg, Christian Lidig, Mark E. White, Min Y. Tsai, James S. Speck, Oliver Bierwagen, Zbigniew Galazka, Rüdiger Goldhahn
Published 2019-02-01

Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

by Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei Osinsky, Winston V. Schoenfeld, James S. Speck, Timothy Vogt
Published 2019-02-01

Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches

by Jianfeng Wang, Kelsey Fast Jorgensen, Esmat Farzana, Kai Shek Qwah, Morteza Monavarian, Zachary J. Biegler, Thomas Mates, James S. Speck
Published 2021-08-01

Highly Conductive n-Al_0.65Ga_0.35N Grown by MOCVD Using Low V/III Ratio

by Christian J. Zollner, Yifan Yao, Michael Wang, Feng Wu, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura
Published 2021-08-01

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

by Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Published 2021-09-01