Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold va...

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Bibliographic Details
Main Authors: Esther Lee, Tae Hyeon Kim, Seung Won Lee, Jee Hoon Kim, Jaeun Kim, Tae Gun Jeong, Ji-Hoon Ahn, Byungjin Cho
Format: Article
Language:English
Published: SpringerOpen 2019-07-01
Series:Nano Convergence
Subjects:
Indium gallium zinc oxide IGZO
Post annealing
Capacitance–voltage measurement
X-ray photoelectron spectroscopy depth profiling
Electrical bias stress stability
Online Access:http://link.springer.com/article/10.1186/s40580-019-0194-1

Internet

http://link.springer.com/article/10.1186/s40580-019-0194-1

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