Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

by Esther Lee, Tae Hyeon Kim, Seung Won Lee, Jee Hoon Kim, Jaeun Kim, Tae Gun Jeong, Ji-Hoon Ahn, Byungjin Cho
Published 2019-07-01