Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped

Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped

In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN. The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at room temperature. The electrical parameters such as saturation current I0 (1.98 ´ 10-7 A), ideality...

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Bibliographic Details
Main Authors: R. KHELIFI, H. MAZARI, S. MANSOURI, Z. BENAMARA, M. MOSTEFAOUI, K. AMEUR, N. BENSEDDIK, P. MARIE, P. RUTERANA, I. MONNET, J. M. BLUET, C. BRU-CHEVALLIER
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
Au/GaN
I-V
C-V
Schottky Diodes.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_504.pdf
Description
Summary:In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN. The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at room temperature. The electrical parameters such as saturation current I0 (1.98 ´ 10-7 A), ideality factor n (1.02), barrier height fbn (0.65 eV) and series resistance Rs (84 W) were evaluated from I–V experimental data. The characteristics in these data structures Schottky Au/n-GaN can help to highlight the main conduction mechanisms observed. In addition to the thermionic current present in our structures, the leakage current intervenes too. The barrier height and doping determined from the (C-V) characteristic are of the order of 1.17 eV and 8.16 ´ 1016 cm-3, respectively. The average density of surface states Nss determined set to 1.09 ´ 1012 eV-1 cm-2.
ISSN:2306-8515
1726-5479

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