Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped

Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped

In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN. The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at room temperature. The electrical parameters such as saturation current I0 (1.98 ´ 10-7 A), ideality...

Full description

Bibliographic Details
Main Authors: R. KHELIFI, H. MAZARI, S. MANSOURI, Z. BENAMARA, M. MOSTEFAOUI, K. AMEUR, N. BENSEDDIK, P. MARIE, P. RUTERANA, I. MONNET, J. M. BLUET, C. BRU-CHEVALLIER
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
Au/GaN
I-V
C-V
Schottky Diodes.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_504.pdf

Internet

http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_504.pdf

Similar Items