The major influence of the conduction-band-offset on Zn(O, S)/CuIn0.7Ga0.3Se2 solar cells

by S. Bechlaghem, B. Zebentout, Z. Benamara
Published 2018-09-01

Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance

by H. Dib, Z. Benamara, Z. Kari
Published 2014-05-01

The Inversion Layer Evolution According to the Report of Substrat Doping /Gate Doping of a MSP OS Structure

by H. Dib, Z. Benamara, Z. Kari
Published 2014-05-01

Characterization and Modeling I(V) of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

by N. Benyahya, H. Mazari, N. Benseddik, Z. Benamara, M. Mostefaoui, K. Ameur, K. Ameur, J. M. Bluet, W. Chikhaoui, C. Bru-Chevallier
Published 2014-05-01

Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

by K. AMEUR, Z. BENAMARA, H. MAZARI, N. BENSEDDIK, R. KHELIFI, M. MOSTEFAOUI, M. A. BENAMARA, B. GRUZZA, J. M. BLUET, C. BRU-CHEVALLIER
Published 2014-05-01

Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs

by M. MOSTEFAOUI, H. MAZARI, S. MANSOURI, Z. BENAMARA, R. KHELIFI, K. AMEUR, N. BENSEDDIK, N. BENYAHYA, J. M. BLUET, C. BRU-CHEVALLIER, W. CHIKHAOUI
Published 2014-05-01

Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped

by R. KHELIFI, H. MAZARI, S. MANSOURI, Z. BENAMARA, M. MOSTEFAOUI, K. AMEUR, N. BENSEDDIK, P. MARIE, P. RUTERANA, I. MONNET, J. M. BLUET, C. BRU-CHEVALLIER
Published 2014-05-01

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

by H. MAZARI, K. AMEUR, N. BENSEDDIK, Z. BENAMARA, R. KHELIFI, M. MOSTEFAOUI, N. ZOUGAGH, N. BENYAHYA, R. BECHAREF, G. BASSOU, B. GRUZZA, J. M. BLUET, C. BRU-CHEVALLIER
Published 2014-05-01