Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy
Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to quantitative measurement of the strain field in trans...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4821278 |