Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of the 3C-SiC films were tested using X-ray diffract...

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Bibliographic Details
Main Authors: Lev K. Orlov, Vladimir I. Vdovin, Natalia L. Ivina, Eduard A. Steinman, Yurii N. Drozdov, Michail L. Orlov
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Crystals
Subjects:
gas phase epitaxy
hydric compounds
3C-SiC layers
growth stages
luminescence
quantization
Online Access:https://www.mdpi.com/2073-4352/10/6/491

Internet

https://www.mdpi.com/2073-4352/10/6/491

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