Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

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The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing trans...

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Bibliographic Details
Main Authors:	‘Aqilah binti Abdul Tahrim, Huei Chaeng Chin, Cheng Siong Lim, Michael Loong Peng Tan
Format:	Article
Language:	English
Published:	Hindawi Limited 2015-01-01
Series:	Journal of Nanomaterials
Online Access:	http://dx.doi.org/10.1155/2015/726175

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