Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology
The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing trans...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/726175 |