Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device

Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device

For the first time, this research addresses the notable layout proximity effects induced by stress memorization technique in planer high-k/Metal gate NMOS device systematically, including width effect, different shallow trench spacing effect, and length of diffusion effect. Based on the oxygen diffu...

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Bibliographic Details
Main Authors: Ying-Fei Wang, Qing-Chun Zhang, Ping Li, Xiao-Jing Su, Li-Song Dong, Rui Chen, Li-Bin Zhang, Tian-Yang Gai, Ya-Juan Su, Ya-Yi Wei, Tian Chun Ye
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Layout proximity effects
high-k HfO₂
stress memorization technique
Al diffusion
Online Access:https://ieeexplore.ieee.org/document/9235562/

Internet

https://ieeexplore.ieee.org/document/9235562/

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