Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al<sub>2</sub>O<sub>3&l...

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Main Authors: Dongjin Kim, Yasuyuki Yamamoto, Shijo Nagao, Naoki Wakasugi, Chuantong Chen, Katsuaki Suganuma
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/10/11/745
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spelling doaj-2f1828b5196a4f7d890bafe502508ce42020-11-25T01:37:02ZengMDPI AGMicromachines2072-666X2019-10-01101174510.3390/mi10110745mi10110745Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter JoiningDongjin Kim0Yasuyuki Yamamoto1Shijo Nagao2Naoki Wakasugi3Chuantong Chen4Katsuaki Suganuma5Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, Osaka 565-0871, JapanSpecialty products development, Tokuyama Co., Yamaguchi 746-0006, JapanThe Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, JapanDivision of system development, Yamato Scientific Co., Ltd., Tokyo 135-0047, JapanThe Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, JapanThe Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, JapanThis study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al<sub>2</sub>O<sub>3</sub>) and silicon nitride (Si<sub>3</sub>N<sub>4</sub>-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al<sub>2</sub>O<sub>3</sub> substrate at power over 200 W was about twice higher than DBC-Si<sub>3</sub>N<sub>4</sub> and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al<sub>2</sub>O<sub>3</sub> was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si<sub>3</sub>N<sub>4</sub> and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.https://www.mdpi.com/2072-666X/10/11/745power cycle testsic micro-heater chipdirect bonded copper (dbc) substrateag sinter pastewide band-gap (wbg)thermal resistance
collection DOAJ
language English
format Article
sources DOAJ
author Dongjin Kim
Yasuyuki Yamamoto
Shijo Nagao
Naoki Wakasugi
Chuantong Chen
Katsuaki Suganuma
spellingShingle Dongjin Kim
Yasuyuki Yamamoto
Shijo Nagao
Naoki Wakasugi
Chuantong Chen
Katsuaki Suganuma
Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
Micromachines
power cycle test
sic micro-heater chip
direct bonded copper (dbc) substrate
ag sinter paste
wide band-gap (wbg)
thermal resistance
author_facet Dongjin Kim
Yasuyuki Yamamoto
Shijo Nagao
Naoki Wakasugi
Chuantong Chen
Katsuaki Suganuma
author_sort Dongjin Kim
title Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
title_short Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
title_full Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
title_fullStr Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
title_full_unstemmed Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
title_sort measurement of heat dissipation and thermal-stability of power modules on dbc substrates with various ceramics by sic micro-heater chip system and ag sinter joining
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2019-10-01
description This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al<sub>2</sub>O<sub>3</sub>) and silicon nitride (Si<sub>3</sub>N<sub>4</sub>-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al<sub>2</sub>O<sub>3</sub> substrate at power over 200 W was about twice higher than DBC-Si<sub>3</sub>N<sub>4</sub> and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al<sub>2</sub>O<sub>3</sub> was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si<sub>3</sub>N<sub>4</sub> and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.
topic power cycle test
sic micro-heater chip
direct bonded copper (dbc) substrate
ag sinter paste
wide band-gap (wbg)
thermal resistance
url https://www.mdpi.com/2072-666X/10/11/745
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