Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La<sub>2</sub>O<sub>3</sub> Passivation Layer

Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La<sub>2</sub>O<sub>3</sub> Passivation Layer

In this paper, the impact of La<sub>2</sub>O<sub>3</sub> passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeO<i><sub>x<...

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Bibliographic Details
Main Authors:	Lu Zhao, Hongxia Liu, Xing Wang, Yongte Wang, Shulong Wang
Format:	Article
Language:	English
Published:	MDPI AG 2018-11-01
Series:	Materials
Subjects:	atomic layer deposition Ge-based MIS surface passivation interfacial properties
Online Access:	https://www.mdpi.com/1996-1944/11/11/2333

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