Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La<sub>2</sub>O<sub>3</sub> Passivation Layer
In this paper, the impact of La<sub>2</sub>O<sub>3</sub> passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeO<i><sub>x<...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-11-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/11/11/2333 |