Determination of the electric field induced anisotropy change in sub-100 nm perpendicularly magnetized devices

Determination of the electric field induced anisotropy change in sub-100 nm perpendicularly magnetized devices

We measure the voltage or electric field (EF) modulated change in anisotropy using two methods on the same nanometer sized device: 1) Directly using the area of the hard axis magnetization loop and 2) Indirectly using the switching field distribution method. Both methods yield similar values of effi...

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Bibliographic Details
Main Authors: Jiancheng Huang, Michael Tran, Sze Ter Lim, Aihong Huang, Chuyi Yang, Qi Jia Yap, Guchang Han
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4942822
Description
Summary:We measure the voltage or electric field (EF) modulated change in anisotropy using two methods on the same nanometer sized device: 1) Directly using the area of the hard axis magnetization loop and 2) Indirectly using the switching field distribution method. Both methods yield similar values of efficiency. With the indirect method, the efficiency derived from the thermal stability was found to be more consistent than that from the anisotropy field. Our data also suggests that memory devices that rely solely on EF effects may benefit from larger device sizes.
ISSN:2158-3226

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