Impacts of Cu-Doping on the Performance of La-Based RRAM Devices

Impacts of Cu-Doping on the Performance of La-Based RRAM Devices

Abstract In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO3/Pt), the Cu-embedded devices show higher...

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Bibliographic Details
Main Authors: Yongte Wang, Hongxia Liu, Xing Wang, Lu Zhao
Format: Article
Language:English
Published: SpringerOpen 2019-07-01
Series:Nanoscale Research Letters
Subjects:
LaAlO3
RRAM
Cu-doping
Annealing
Resistive switching characteristics
Online Access:http://link.springer.com/article/10.1186/s11671-019-3064-1

Internet

http://link.springer.com/article/10.1186/s11671-019-3064-1

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