Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level archi...

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Bibliographic Details
Main Authors: Huei Chaeng Chin, Cheng Siong Lim, Weng Soon Wong, Kumeresan A. Danapalasingam, Vijay K. Arora, Michael Loong Peng Tan
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2014/879813

Internet

http://dx.doi.org/10.1155/2014/879813

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