High Performance Metal-Gate/High-<inline-formula> <tex-math notation="LaTeX">${\kappa } $ </tex-math></inline-formula> GaN MOSFET With Good Reliability for Both Logic and Power Applications
The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (μC<sub>ox</sub>) of 335 μA/V<sup>2</sup> (410 mA/mm at L<sub>G</sub> = 5 μm and only V<sub>G</sub>...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7527612/ |