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Ferroelectric HfO<sub>2</sub> Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

by Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, Toshiro Hiramoto
Published 2019-01-01

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2

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

by Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Published 2020-01-01

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