Dual of modulation spaces

by Masaharu Kobayashi
Published 2007-01-01

Modulation spaces Mp,q for 0<p, q≦∞

by Masaharu Kobayashi
Published 2006-01-01

On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

by Masaharu Kobayashi, Toshiro Hiramoto
Published 2016-02-01

A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization

by Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto
Published 2019-01-01

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

by Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Published 2020-01-01

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

by Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Published 2019-01-01

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

by Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto
Published 2018-01-01

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO₂ Capacitor

by Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, Toshiro Hiramoto
Published 2018-01-01

Ferroelectric HfO₂ Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

by Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, Toshiro Hiramoto
Published 2019-01-01

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

by Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Published 2020-01-01