Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method

by Yuta Takishita, Masaki Kobayashi, Kazuki Hattori, Tokiyoshi Matsuda, Sumio Sugisaki, Yasuhiko Nakashima, Mutsumi Kimura
Published 2020-03-01

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

by Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Published 2019-10-01