Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

by Daichi Koretomo, Shuhei Hamada, Yusaku Magari, Mamoru Furuta
Published 2020-04-01

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

by Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Published 2019-10-01