Analysis of multi-phase clocked electron pumps consisting of single-electron transistors

by Amakawa, S., Mizuta, Hiroshi, Nakazato, K., Ahmed, H.
Published 2001

New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si

by Uno, S., Nakazato, K., Yamaguchi, S., Koshida, N., Mizuta, Hiroshi
Published 2003

Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cell

by Nakazato, K., Itoh, K., Mizuta, Hiroshi, Ahmed, H.
Published 1999

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers

by Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi
Published 2005

Reduction of acoustic phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

by Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi
Published 2005

Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers

by Pooley, D. M., Ahmed, H., Mizuta, Hiroshi, Nakazato, K.
Published 2001

Coulomb blockade in silicon nano-pillars

by Pooley, D. M., Ahmed, H., Mizuta, Hiroshi, Nakazato, K.
Published 1999

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

by Katayama, K., Mizuta, Hiroshi, Muller, H. -O, Williams, D., Nakazato, K.
Published 1999

Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation

by Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D., Ahmed, H.
Published 2003

Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors

by Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Nakazato, K., Ahmed, H.
Published 2003

Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors

by Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Taniguchi, K.
Published 2002

Nanosilicon for single-electron devices

by Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T, Durrani, Z. A. K., Amakawa, S., Nakazato, K., Ahmed, H.
Published 2004

Carrier transport across few grain boundaries in highly doped polycrystalline silicon

by Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., Ahmed, H., Taniguchi, K.
Published 2001

Nanoscale Coulomb blockade memory and logic devices

by Mizuta, Hiroshi, Muller, H. O., Tsukagoshi, K., Williams, D., Durrani, Z., Irvine, A., Amakawa, S., Evans, G., Nakazato, K., Ahmed, H.
Published 2001

Fabrication of MOS-integrated metallic single-electron memories

by Pepin, A., Vieu, C., Launois, H., Rosmeulen, M., Rossum, M. van, Muller, H. O., Williams, D., Mizuta, Hiroshi, Nakazato, K.
Published 2000