An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

by Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu, Yintang Yang
Published 2021-08-01

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

by Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, Yintang Yang
Published 2021-04-01