An Improved UU-MESFET with High Power Added Efficiency

by Hujun Jia, Mei Hu, Shunwei Zhu
Published 2018-11-01

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

by Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu, Yintang Yang
Published 2021-08-01

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

by Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, Yintang Yang
Published 2021-04-01

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

by Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang
Published 2019-07-01

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

by Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang
Published 2019-08-01

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

by Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang
Published 2019-07-01

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

by Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, Yintang Yang
Published 2019-12-01