Scalability of sub-100 nm thin-channel InAs PHEMTs

by del Alamo, Jesus A., Kim, Dae-Hyun
Published 2010

30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz

by Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2012

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

by Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2012

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

by Waldron, Niamh, Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2012

60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics

by Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2012

Logic characteristics of 40 nm thin-channel InAs HEMTs

by Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2012

30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications

by Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.
Published 2010

Performance analysis of ultra-scaled InAs HEMTs

by del Alamo, Jesus A., Kim, Dae-Hyun, Kharche, Neerav, Luisier, Mathieu
Published 2010

Quantum capacitance in scaled down III-V FETs

by Jin, Donghyun, Kim, Dae-Hyun, Kim, Tae-Woo, del Alamo, Jesus A.
Published 2010

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

by Kharche, Neerav, Klimeck, Gerhard, Kim, Dae-Hyun, Luisier, Mathieu, del Alamo, Jesus A.
Published 2014

50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz

by del Alamo, Jesus A., Kim, Dae-Hyun, Chen, Peter, Ha, Wonill, Urteaga, Miguel, Brar, B.
Published 2012

III-V CMOS: What have we learned from HEMTs?

by del Alamo, Jesus A., Kim, Dae-Hyun, Kim, Tae-Woo, Jin, Donghyun, Antoniadis, Dimitri A.
Published 2012