Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs

by Brar, B., Kim, D. H., del Alamo, Jesus A., Antoniadis, Dimitri A.
Published 2010

50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz

by del Alamo, Jesus A., Kim, Dae-Hyun, Chen, Peter, Ha, Wonill, Urteaga, Miguel, Brar, B.
Published 2012

L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator

by Kim, D.-H, Li, J., Kuo, J.-M, Pinsukanjana, P., Kao, Y.-C, Chen, P., Papavasiliou, A., King, C., Regan, E., Urteaga, M., Brar, B., Kim, T.-W, del Alamo, Jesus A., Antoniadis, Dimitri A.
Published 2014

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

by Bulsara, Mayank, Fitzgerald, Eugene A., Yang, N., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Benaissa, L., Augendre, E., Hoke, William E., LaRoche, J. R., Herrick, K. J., Kazior, T. E.
Published 2012