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Killge, S.
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Killge, S.
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In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride
by
Albert, M.
,
Bartha, J.W
,
Killge
, S.
,
Knaut, M.
,
Mikolajick, T.
,
Reif, J.
Published 2022
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Related Subjects
Alumina
Aluminum oxide
Aspect ratio
Atomic layer deposition
Atomic layer etching
Atomic-layer deposition
Atoms
Etch rates
Etching
Etching process
Fluorine compounds
Hafnium oxides
In-Situ Study
Oxide films
Photoelectrons
Photons
Process pressure
Semiconductor devices
Sequential reaction
Spectroscopic analysis
Spectroscopic ellipsometry
Surface reactions
Temperature distribution
Thin films
Thin-films
Trimethylaluminum
X ray photoelectron spectroscopy
X-ray photoelectrons
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