Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors

by E. Bendada, K. Raïs
Published 1998-01-01

Diode Physical Parameters for HEXFETs Characterization of Dose Effect

by E. Bendada, K. Raïs
Published 1998-01-01

Utilization of the Thermoelectric Sensor to Realize a New Fluid Level Detector

by K. Hachami, D. Moussaid, M. Rahmoun, E. Bendada
Published 2001-01-01

Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors

by M. Rahmoun, E. Bendada, A. El Hassani, K. Raïs
Published 2000-01-01

Peltier Effect Applied to the Design and Realization of a New Mass Flow Sensor

by M. Rahmoun, A. El Hassani, D. Leclerq, E. Bendada
Published 2000-01-01

Surface Recombination Via Interface Defects in Field Effect Transistors

by E. Bendada, K. Raïs, P. Mialhe, J. P. Charles
Published 1998-01-01

Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

by A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs
Published 2001-01-01

New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

by Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily
Published 2001-01-01

Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

by M. De La Bardonnie, P. Mialhe, E. Bendada, E. Blampain, A. Hoffmann, J.-P. Charles
Published 1998-01-01