Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

by Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Published 2021-01-01

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

by Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Published 2018-01-01

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi, Sima Dimitrijev
Published 2021-01-01

A Method for Selection of Power MOSFETs to Minimize Power Dissipation

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi, Sima Dimitrijev
Published 2021-09-01

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Published 2020-01-01

The Correct Equation for the Current Through Voltage-Dependent Capacitors

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Published 2020-01-01