Effect of porosity on GaN for hydrogen gas sensing
Porous wide bandgap semiconductors have been widely studied in the last decade due to their unique properties compared to the bulk crystals. The high surface area, shift of bandgap, luminescence intensity enhancement and efficient photoresponse when porosity is formed can be tailored to fabricate ne...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Series: | MALAYSIAN JOURNAL OF FUNDAMENTAL AND APPLIED SCIENCES
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| Online Access: | View Fulltext in Publisher |