Electrical Characterization of Metal-Ferroelectric-Insulator-Semiconductor having Double Layered Insulator for Memory Applications

Electrical Characterization of Metal-Ferroelectric-Insulator-Semiconductor having Double Layered Insulator for Memory Applications

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Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si)...

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Bibliographic Details
Main Authors: IOP, Habibah, Z (Author), Herman, SH (Author), Ismail, LN (Author), Rozana, MD (Author), Rusop, M (Author), Wahid, MH (Author)
Format: Article
Language:English
Online Access:View Fulltext in Publisher

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