Electrical Characterization of Metal-Ferroelectric-Insulator-Semiconductor having Double Layered Insulator for Memory Applications
Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si)...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Online Access: | View Fulltext in Publisher |