Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys

Effects of ultraviolet-assisted photo-electrochemical (PEC) etching current densities (J = 20, 40, 80, and 160 mA/cm(2)) towards structural, physical, and optical properties of aluminium indium gallium nitride (AlInGaN) semiconductors as well as corresponding schematized mechanism were studied and d...

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Bibliographic Details
Main Authors: Hassan, Z (Author), Lim, WF (Author), Quah, HJ (Author), Radzali, R (Author), Yam, FK (Author), Zainal, N (Author)
Format: Article
Language:English
Published: 2019
Subjects:
GAN
Online Access:View Fulltext in Publisher