Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active lay...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
1993.
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| Subjects: | |
| Online Access: | Get fulltext |