Indium tin oxide films by sequential evaporation
In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
1990-08-15.
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| Subjects: | |
| Online Access: | Get fulltext |