Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step
Silicon-germanium (Si<sub>1-x</sub>Ge<sub>x</sub>) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2016-01-19.
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| Subjects: | |
| Online Access: | Get fulltext |