Role and optimization of the active oxide layer in TiO<sub>2</sub>-based RRAM
TiO<sub>2</sub> is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO<sub>2</sub> layer and at the interfaces between it and the surro...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2016-01-25.
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| Subjects: | |
| Online Access: | Get fulltext |