Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon
High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2015-04-16.
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| Subjects: | |
| Online Access: | Get fulltext |