Next generation device grade silicon-germanium on insulator
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over lar...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2015-02-06.
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| Subjects: | |
| Online Access: | Get fulltext |