Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films
The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V<sup>1/2</sup>. The activation energy, measured from the temperature dep...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2009-06-25.
|
| Subjects: | |
| Online Access: | Get fulltext Get fulltext |