Double-polysilicon self-aligned lateral bipolar transistors
A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned structure to maximise high-frequency performance is introduced. Silicon-on-oxide (SOI) wafers are used to isolate devices from the substrate and to minimise parasitic substrate capacitances(CJCS0) around 1.3-2....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2008.
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| Subjects: | |
| Online Access: | Get fulltext |