Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition
Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2008.
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| Subjects: | |
| Online Access: | Get fulltext |